The central AI investment theme is shifting from computing power to memory-system constraints
AI summary card
The central AI investment theme is shifting from computing power to memory-system constraints
Morgan Stanley believes that continued AI expansion requires breaking through the “memory wall,” with beneficiaries extending from traditional memory manufacturers to packaging, interconnects, interfaces, system design, and the materials ecosystem.
- Cloud memory spending is expected to reach US$418bn by 2030, implying a CAGR of approximately 8% from 2026.
- Memory spending could account for 40% of cloud capital expenditure in 2027, up from 12% before the AI cloud capex boom in 2023.
- The report proposes six memory innovation pathways: design, process, packaging, peripherals, integration, and materials.
- The base-case TAM for emerging memory technologies excluding HBM is expected to expand from US$1.2bn in 2025 to US$23.0bn in 2030; the base case including HBM is US$276bn.
- Core beneficiaries include Samsung Electronics, Kioxia, Micron, and SanDisk; on the ecosystem side, the report highlights Montage Technology, GigaDevice, Winbond, APMemory, Renesas, and Marvell, among others.
Report interpretation
Overview
This report conducts thematic research on next-generation memory. Its core view is that AI has entered a new phase in which the constraint is shifting from computing expansion to system efficiency. As generative AI and agentic AI drive demand for tokens, context windows, and data access, memory capacity, bandwidth, and cost are becoming key bottlenecks to AI scalability.
Core views
The report argues that the “memory wall” is not simply a supply issue, nor can it be solved merely by adding DRAM or HBM capacity. Instead, it is a full-stack challenge involving data storage, movement, access, packaging, interconnects, materials, and system co-design. Investment opportunities therefore extend beyond traditional memory-chip manufacturers to interfaces, connectivity, advanced packaging, system design, and materials and equipment across the broader ecosystem.
Analysis framework
The research demonstrates the memory bottleneck through the mismatch between AI demand growth, cloud capital-expenditure structure, memory prices, bandwidth improvements, and token growth. It also draws on the disruptive impact of 3D NAND on traditional storage architectures and supply chains, developing a six-path framework to assess the commercialization potential and investment implications of next-generation memory technologies.
Methodology notes
Design, process, packaging, peripherals, integration, and materials
This framework expands memory innovation beyond traditional process nodes to system-level innovation and is used to assess which technology pathways have scalability and commercial relevance.
Computing power improves faster than memory capacity, bandwidth, and cost, constraining system performance
The report uses this concept to explain that even with stronger computing capabilities, AI models remain constrained by data-supply speed, capacity, and economics.
3D NAND overcame the physical scaling limits of 2D planar NAND through vertical stacking
The report uses the industry adoption of 3D NAND to illustrate how major memory innovations can reshape cost curves, end-market applications, and supply-chain structures.
Asset mapping & comparison
Structured mapping from thesis to named assets (strengths, weaknesses, peers, risks).
- Samsung ElectronicsTraditional memory leader and AI-memory beneficiary
- Strengths
- A relatively complete positioning across HBM mass production, 3D DRAM, thousand-layer NAND, hybrid copper bonding, CXL, and customized memory.
- Weaknesses
- In the near term, it remains exposed to changes in the memory cycle and supply-demand visibility.
- Comparison
- Compared with earlier-stage ecosystem companies, Samsung is more of a scaled mainstream-memory beneficiary.
- Risks
- If year-over-year price growth plateaus by the end of 2026, near-term catalysts may be insufficient.
- KioxiaBeneficiary of AI SSD and NAND systems
- Strengths
- Its CM, GP, and LC series address bandwidth, latency, IOPS, and capacity requirements, with some products able to alleviate HBM capacity constraints.
- Weaknesses
- It is relatively dependent on the realization of AI storage demand and the pace of product commercialization.
- Comparison
- Compared with DRAM/HBM manufacturers, Kioxia places greater emphasis on NAND and SSD moving up the AI data hierarchy.
- Risks
- If hyperscaler adoption of storage architectures is slower than expected, earnings upside may be delayed.
- MicronBeneficiary of DRAM, HBM, and AI data-center demand
- Strengths
- The report believes its HBM execution is underestimated and that AI data-center demand could drive a multiyear earnings upcycle.
- Weaknesses
- Valuation expansion depends on the sustainability of HBM share, gross margins, and long-term supply-demand tightness.
- Comparison
- Like Samsung, it offers core exposure to the mainstream memory cycle and AI demand.
- Risks
- If supply-demand tightness eases or customer agreements are realized below expectations, earnings revisions may slow.
- SanDiskBeneficiary of AI NAND and high-capacity storage
- Strengths
- The report believes inference demand will push NAND into higher memory tiers for LLM KV-cache and context-window storage.
- Weaknesses
- It depends on a structural shift toward cloud becoming the largest end market for NAND.
- Comparison
- Compared with the traditional PC/mobile NAND cycle, SanDisk’s investment thesis relies more on hyperscaler demand and new commercial agreements.
- Risks
- If AI inference storage demand falls short of expectations, structural re-rating potential may be limited.
- Montage TechnologyBeneficiary of memory interfaces, connectivity, and expanding AI-server content
- Strengths
- It has exposure to the “plumbing” of next-generation memory systems, including CXL, MRDIMM, and DDR6.
- Weaknesses
- Some technologies remain in the early-adoption phase, making the commercialization pace uncertain.
- Comparison
- Compared with traditional memory manufacturers, Montage represents more differentiated ecosystem- and interface-side alpha.
- Risks
- Standards implementation, customer qualification, and system-deployment progress may fall below expectations.
- GigaDevice, Winbond, APMemoryBeneficiaries of the advanced-packaging, 3D-stacking, and edge-AI specialized-memory ecosystem
- Strengths
- They may benefit from wafer-on-wafer stacking, specialized memory applications, bandwidth improvements, power-efficiency gains, and form-factor optimization.
- Weaknesses
- Scalability and customer adoption still require validation.
- Comparison
- They are more early-stage and niche-application focused than mainstream DRAM/NAND manufacturers.
- Risks
- Technical mass-production challenges, costs, and end-market demand remain uncertain.
- Renesas, MarvellNames related to the next-generation interconnect and connectivity ecosystem
- Strengths
- The report lists them as examples related to next-generation interconnects.
- Weaknesses
- The report excerpt does not provide detailed financial valuation or standalone rating analysis.
- Comparison
- They belong to the system-connectivity layer of memory-bottleneck solutions rather than the storage-chip core itself.
- Risks
- Competition among interconnect standards and changes in system-architecture roadmaps may affect the degree of benefit.
Key data
- Cloud memory spending forecastUS$418bn by 2030Based on current forecasts, implying approximately 8% CAGR from 2026.
- Agentic AI contribution to incremental DRAM demand26-77% by 2030The report believes agentic AI will materially increase memory demand.
- Memory as a share of cloud capital expenditure40% in 2027e vs 12% in 2023Shows that memory is shifting from a peripheral cost item to a core AI infrastructure expenditure.
- DDR5 single-channel bandwidth improvement+14%, from 44.8GB/s in 2024 to 51.2GB/s in 2026Bandwidth improvements are materially lagging token growth.
- GCP token growth10T/month in Apr 2024 to 3,200T in Jun 2026The report uses token growth of more than 320x to illustrate system-level pressure.
- TAM of emerging memory technologies, excluding HBMUS$23.0bn base case by 2030; bull/bear US$41.4bn/US$16.9bnDriven primarily by packaging- and peripheral-related pathways.
- TAM of emerging memory technologies, including HBMUS$276bn base case by 2030; bull/bear US$342bn/US$160bnIncluding HBM significantly expands the potential market size.
- Micron target priceUS$1,200The report maintains Overweight, valuing the company at 30x through-cycle earnings power of US$40.
- SanDisk target priceUS$1,750The report maintains Overweight, valuing the company at 28x through-cycle EPS of US$62.50.
- Montage Technology target-price adjustment6809.HK: HK$310 to HK$432; 688008.SS: Rmb274 to Rmb377Reflects opportunities from the expansion of CXL, MRDIMM, DDR6, and AI-server content.
Impact & implications
The investment implication is that the AI semiconductor theme may shift from “who owns the fastest GPU” to “who can move, store, and access data most efficiently.” Traditional memory leaders remain direct beneficiaries, but more differentiated alpha may come from underpriced areas such as advanced packaging, interfaces, interconnects, CXL expansion, MRDIMM bandwidth improvements, PIM/CIM architectures, and specialized storage solutions.
Risks
- Software-layer optimization may reduce the need for incremental hardware intensity.
- A slowdown in AI demand due to weaker-than-expected commercialization or monetization would undermine memory-demand assumptions.
- Next-generation memory technologies are complex, and many solutions have not yet completed large-scale validation, creating execution risk.
- Memory stocks remain subject in the near term to pricing momentum, supply discipline, and cyclical catalysts.
- The standardization and customer-adoption pace of ecosystem technologies such as CXL, MRDIMM, DDR6, PIM/CIM, and advanced packaging remain uncertain.
What to watch
- Adoption progress for next-generation memory standards.
- Launches and customer qualification of new connectivity solutions such as CXL.
- Commercialization evidence for architectures including 3D DRAM, advanced HBM, wafer-on-wafer, MRDIMM, and DDR6.
- Whether system-level AI deployments show that memory bottlenecks are being alleviated.
- Price trends, supply-demand tightness, and changes in cloud capital-expenditure structure for DRAM, NAND, and HBM.
- Earnings revisions and order visibility for key names including Samsung, Kioxia, Micron, SanDisk, and Montage Technology.